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| NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 SILICON DARLINGTON POWER TRANSISTORS The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676-BD678-BD680-BD682 . ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BD675 BD677 BD679 BD681 BD675 BD677 BD679 BD681 IC ICM IBM @ Tmb = 25C Value 60 80 100 120 60 80 100 120 5 4 6 0.1 40 150 -65 to +150 Unit V VCBO VEBO Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature V V A A Watts C C IC IB PT TJ TStg THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W COMSET SEMICONDUCTORS 1 NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= VCBOMAX=60 V IE=0 , VCB= VCBOMAX=80 V IE=0 , VCB= VCBOMAX=100 V IE=0 , VCB= VCBOMAX=120 V IE=0 ,VCB=1/2VCBOMAX= 30V,Tj= 150C IE=0 ,VCB=1/2VCBOMAX= 40V,Tj= 150C IE=0 ,VCB=1/2VCBOMAX= 50V,Tj= 150C IE=0 ,VCB=1/2VCBOMAX= 60V,Tj= 150C IB=0 , VCE= 1/2VCEOMAX=30 V IB=0 , VCE= 1/2VCEOMAX=40 V IB=0 , VCE= 1/2VCEOMAX=50 V IB=0 , VCE= 1/2VCEOMAX=60 V IC=0, -VEB=5 V BD675 BD677 BD679 BD681 BD675 BD677 BD679 BD681 BD675 BD677 BD679 BD681 Min Typ 750 10 0,8 2200 1500 60 1,5 0,3 1,5 M Unit x 0,2 0,2 0,2 0,2 1 1 1 1 0,2 0,2 0,2 0,2 5 2,5 2,5 1.5 5 kHz V A s mA ICBO Collector cut-off current ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage DC Current Gain Base-Emitter Voltage(1&2) Small signal current gain mA mA V IC=1.5 A,-IB=6 Ma (BD675 ; IC=2 A ) VCE=3 V, IC=500 mA VCE=3 V, IC=1,5 A VCE=3 V, IC=4 A VCE=3 V, IC=1,5 A (BD675 ; IC=2 A ) VCE=3 V, IC=1,5 A, f= 1 MHz (BD675 ; IC=2 A ) VCE=3 V, IC=1,5 A (BD675 ; IC=2 A ) IF=1,5 A (BD675 ; IF=2 A ) -VCE=50 V, tP= 20ms,non rep., without heatsink V Ut-off frequency Diode forward voltage Second-breakdown I(SB) collector current Turn-on time ton -Icon= 1,5A, -Ibon= Iboff= 6mA, Turn-off time toff 1. Measured under pulse conditions :tP <300s, <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature. COMSET SEMICONDUCTORS 2 NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P max min 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 inches max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Pin 1 : Pin 2 : Case : Emitter Collector Base COMSET SEMICONDUCTORS 3 COMSET SEMICONDUCTORS 4 |
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